elektronische bauelemente SMG2319P -2.1a , -30v , r ds(on) 200 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. sc-59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. features ? low r ds(on) provides higher efficiency and extends battery life. ? fast switch. ? low gate charge. ? miniature sc-59 surface mount package saves board space. application voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application. package information package mpq leader size sc-59 3k 7? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t a =25c -2.1 continuous drain current 1 t a =70c i d -1.7 a pulsed drain current 2 i dm 10 a continuous source current (diode conduction) 1 i s -0.4 a t a =25c 1.25 power dissipation 1 t a =70c p d 0.8 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance data t Q 5 sec 250 maximum junction to ambient 1 steady-state r ja 285 c/w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 1 2 3
elektronische bauelemente SMG2319P -2.1a , -30v , r ds(on) 200 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static - - -1 v ds = -24v, v gs =0 zero gate voltage drain current i dss - - -10 a v ds = -24v, v gs =0, t j =55c gate-body leakage i gss - - 100 na v ds =0, v gs = 20v gate-threshold voltage v gs(th) -1.3 - - v v ds =v gs , i d = -250 a on-state drain current 1 i d(on) -3 - - a v ds = -5v, v gs = -4.5v - - 200 v gs = -10v, i d = -2.1a drain-source on-resistance 1 r ds(on) - - 300 m ? v gs = -4.5v, i d = -1.7a forward transconductance 1 g fs - 2 - s v ds = -5v, , i d = -2.1a diode forward voltage v sd - -0.7 -1.2 v i s = -0.4a, v gs =0 dynamic 2 total gate charge q g - 3.4 - gate-source charge q gs - 0.8 - gate-drain charge q gd - 1.5 - nc i d = -2.1a v ds = -10v v gs = -5v turn-on delay time td (on) - 8 - rise time t r - 18 - turn-off delay time td (off) - 52 - fall time t f - 39 - ns v ds = -10v v gen = -10v r g =50 ? i d = -1.1a notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SMG2319P -2.1a , -30v , r ds(on) 200 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SMG2319P -2.1a , -30v , r ds(on) 200 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SMG2319P -2.1a , -30v , r ds(on) 200 m ? p-channel enhancement mosfet 12-apr-2011 rev. b page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
|
